? semiconductor components industries, llc, 2015 september, 2015 ? rev. 2 1 publication order number: nlas5223c/d nlas5223c, nlas5223cl ultra-low 0.35 dual spdt analog switch the nlas5223c is an advanced cmos analog switch fabricated in sub?micron silicon gate cmos technology. the device is a dual independent single pole double throw (spdt) switch featuring ultra?low r on of 0.35 , at v cc = 4.3 v. the part also features guaranteed break before make (bbm) switching, assuring the switches never short the driver. features ? ultra?low r on , 0.35 (typ) at v cc = 4.3 v ? nlas5223c interfaces with 2.8 v chipset ? nlas5223cl interfaces with 1.8 v chipset ? single supply operation from 1.65?4.5 v ? full 0?v cc signal handling capability ? high off?channel isolation ? low standby current, 50 na ? low distortion ? r on flatness of 0.15 ? high continuous current capability ? 320 ma through each switch ? large current clamping diodes at analog inputs ? 100 ma continuous current capability ? package: ? 1.4 x 1.8 x 0.55 mm uqfn10 pb?free ? these are pb?free devices applications ? cell phone audio block ? speaker and earphone switching ? ring?t one chip/amplifier switching ? modems www. onsemi.com marking diagram xx = specific device code m = date code/assembly location = pb?free device (note: microdot may be in either location) 1 uqfn10 case 488at xxm v cc in2 c om2 gnd 8 9 10 12 nc1 nc2 no1 76 5 4 3 no2 in1 com 1 function table 0 1 in 1, 2 no 1, 2 nc 1, 2 off on on off see detailed ordering, marking and shipping information in the package dimensions section on page 9 of this data sheet. ordering information
nlas5223c, nlas5223cl www. onsemi.com 2 nc in no com figure 1. logic equivalent circuit pin description qfn pin # symbol name and function 2, 5, 7, 10 nc1 to nc2, no1 to no2 independent channels 4, 8 in1 and in2 controls 3, 9 com1 and com2 common channels 6 gnd ground (v) 1 v cc positive supply voltage maximum ratings symbol parameter value unit v cc positive dc supply voltage ?0.5 to +7.0 v v is analog input voltage (v no , v nc , or v com ) ?0.5 v is v cc + 0.5 v v in digital select input voltage ?0.5 v in +5.5 v i anl1 continuous dc current from com to nc/no 320 ma i anl?pk1 peak current from com to nc/no, 10% duty cycle, 100 ms = t on (note 1) 600 ma i anl?pk2 instantaneous peak current from com to nc/no, 10% duty cycle, t on < 1 s 850 ma i clmp continuous dc current into com/no/nc with respect to v cc or gnd 100 ma esd esd withstand voltage human body model (hbm) >3000 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. defined as 10% on, 90% off duty cycle. recommended operating conditions symbol parameter min max unit v cc dc supply voltage 1.65 4.5 v v in digital select input voltage (ovt) overvoltage tolerance gnd 4.5 v v is analog input voltage (nc, no, com) gnd v cc v t a operating temperature range ?40 + 85 c t r , t f input rise or fall time, select v cc = 1.6 v ? 2.7 v v cc = 3.0 v ? 4.5 v 20 10 ns/v functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability.
nlas5223c, nlas5223cl www. onsemi.com 3 nlas5223c dc characteristics ? digital section (voltages referenced to gnd) symbo l parameter condition v cc guaranteed limit uni t 25 c ? 40 c to +85 c v ih minimum high?level input voltage, select inputs 3.0 4.3 1.4 2.0 1.4 2.0 v v il maximum low?level input voltage, select inputs 3.0 4.3 0.7 0.8 0.7 0.8 v i in maximum input leakage current, select inputs v in = v cc or gnd 4.3 0.1 1.0 a i off power off leakage current v in = v cc or gnd 0 0.5 2.0 a i cc maximum quiescent supply current (note 2) select and v is = v cc or gnd 1.65 to 4.5 1.0 2.0 a 2. guaranteed by design. resistance measurements do not include test circuit or package resistance. nlas5223c dc electrical characteristics ? analog section symbol parameter condition v cc guaranteed maximum limit uni t 25 c ?40 c to + 85 c min max min max r on nc/no on?resistance (note 3) v in = v il or v in = v ih v is = gnd to v cc i com = 100 ma 3.0 4.3 0.4 0.35 0.5 0.4 r flat nc/no on?resistance flatness (notes 3 and 4) i com = 100 ma v is = 0 to v cc 3.0 4.3 0.16 0.11 0.20 0.14 r on on?resistance match between channels (notes 3 and 5) v is = 1.5 v; i com = 100 ma v is = 2.2 v; i com = 100 ma 3.0 4.3 0.05 0.05 0.05 0.05 i nc(off) i no(off) nc or no off leakage current (note 3) v in = v il or v ih v no or v nc = 0.3 v v com = 4.0 v 4.3 ?5.0 5.0 ?50 50 na i com(on) com on leakage current (note 3) v in = v il or v ih v no 0.3 v or 4.0 v with v nc floating or v nc 0.3 v or 4.0 v with v no floating v com = 0.3 v or 4.0 v 4.3 ?10 10 ?100 100 na 3. guaranteed by design. resistance measurements do not include test circuit or package resistance. 4. flatness is defined as the difference between the maximum and minimum value of on?resistance as measured over the specified a nalog signal ranges. 5. r on = r on(max) ? r on(min) between nc1 and nc2 or between no1 and no2.
nlas5223c, nlas5223cl www. onsemi.com 4 nlas5223cl dc characteristics ? digital section (voltages referenced to gnd) symbo l parameter condition v cc guaranteed limit uni t 25 c ? 40 c to +85 c v ih minimum high?level input voltage, select inputs 3.0 4.3 1.3 1.6 1.3 1.6 v v il maximum low?level input voltage, select inputs 3.0 4.3 0.5 0.6 0.5 0.6 v i in maximum input leakage current, select inputs v in = 4.5 v or gnd 4.3 0.1 1.0 a i off power off leakage current v in = 4.5 v or gnd 0 0.5 2.0 a i cc maximum quiescent supply current select and v is = v cc or gnd 1.65 to 4.5 1.0 2.0 a i ccv maximum quiescent supply current, low voltage driving (note 6) v is = v cc or gnd v in = 1.65 v 4.3 145 150 a v is = v cc or gnd v in = 1.80 v 125 130 v is = v cc or gnd v in = 2.60 v 50 55 6. guaranteed by design. resistance measurements do not include test circuit or package resistance. nlas5223cl dc electrical characteristics ? analog section symbol parameter condition v cc guaranteed maximum limit uni t 25 c ?40 c to + 85 c min max min max r on nc/no on?resistance (note 7) v in = v il or v in = v ih v is = gnd to v cc i com = 100 ma 3.0 4.3 0.4 0.35 0.5 0.4 r flat nc/no on?resistance flatness (notes 7 and 8) i com = 100 ma v is = 0 to v cc 3.0 4.3 0.16 0.11 0.20 0.14 r on on?resistance match between channels (notes 7 and 9) v is = 1.5 v; i com = 100 ma v is = 2.2 v; i com = 100 ma 3.0 4.3 0.05 0.05 0.05 0.05 i nc(off) i no(off) nc or no off leakage current (note 7) v in = v il or v ih v no or v nc = 0.3 v v com = 4.0 v 4.3 ?10 10 ?100 100 na i com(on) com on leakage current (note 7) v in = v il or v ih v no 0.3 v or 4.0 v with v nc floating or v nc 0.3 v or 4.0 v with v no floating v com = 0.3 v or 4.0 v 4.3 ?10 10 ?100 100 na 7. guaranteed by design. resistance measurements do not include test circuit or package resistance. 8. flatness is defined as the difference between the maximum and minimum value of on?resistance as measured over the specified a nalog signal ranges. 9. r on = r on(max) ? r on(min) between nc1 and nc2 or between no1 and no2.
nlas5223c, nlas5223cl www. onsemi.com 5 ac electrical characteristics (input t r = t f = 3.0 ns) symbo l parameter test conditions v cc (v) v is (v) guaranteed maximum limit uni t 25 c ?40 c to + 85 c min typ * max min max t on turn?on time r l = 50 , c l = 35 pf (figures 3 and 4) 2.3 ? 4.5 1.5 50 60 ns t off turn?off time r l = 50 , c l = 35 pf (figures 3 and 4) 2.3 ? 4.5 1.5 30 40 ns t bbm minimum break?before?make time v is = 3.0 r l = 50 , c l = 35 pf (figure 2) 3.0 1.5 2 15 ns typical @ 25, v cc = 3.6 v c in control pin input capacitance 3.5 pf c no/nc no, nc port capacitance 60 pf c com com port capacitance when switch is enabled 200 pf *typical characteristics are at 25 c. additional application characteristics (voltages referenced to gnd unless noted) symbo l parameter condition v cc (v) 25 c uni t typical bw maximum on?channel ?3 db bandwidth or minimum frequency response v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 24 mhz v onl maximum feed?through on loss v in = 0 dbm @ 100 khz to 50 mhz v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 ?0.06 db v iso off?channel isolation f = 100 khz; v is = 1 v rms; c l = 5.0 pf v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 ?68 db q charge injection select input to common i/o v in = v cc to gnd, r is = 0 , c l = 1.0 nf q = c l x dv out (figure 6) 1.65 ? 4.5 38 pc thd total harmonic distortion thd + noise f is = 20 hz to 20 khz, r l = r gen = 600 , c l = 50 pf v is = 2.0 v rms 3.0 0.08 % vct channel?to?channel crosstalk f = 100 khz; v is = 1.0 v rms, c l = 5.0 pf, r l = 50 v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 ?70 db 10. off?channel isolation = 20log10 (v com /v no ), v com = output, v no = input to off switch.
nlas5223c, nlas5223cl www. onsemi.com 6 figure 2. t bbm (time break?before?make) output dut 50 35 pf v is s witch select pin 90% output input v cc gnd 90% of v oh gnd figure 3. t on /t off 50% 50% 90% 90% t on t off v oh output input v cc 0 v figure 4. t on /t off dut open 35 pf v cc i nput 50% 50% 10% t on t off output input v cc 0 v 10 % 50 0.1 f t bmm output v out v ol v out v oh v ol dut open v is input output 50 35 pf v out 0.1 f
nlas5223c, nlas5223cl www. onsemi.com 7 channel switch control/s test socket is normalized. off isolation is measured across an off channel. on loss is the bandwidth of an on switch. v iso , bandwidth and v onl are independent of the input signal direction. v iso = off channel isolation = 20 log for v in at 100 khz v onl = on channel loss = 20 log for v in at 100 khz to 50 mhz bandwidth (bw) = the frequency 3 db below v onl v ct = use v iso setup and test to all other switch analog input/outputs terminated with 50 output dut input 50 50 generator reference transmitted figure 5. off channel isolation/on channel loss (bw)/crosstalk (on channel to off channel)/v onl 50 v out v in v out v in off on off v out v cc gnd output v in c l dut figure 6. charge injection: (q) v in open output
nlas5223c, nlas5223cl www. onsemi.com 8 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 0 10 1k 10k 100k frequency (hz) thd (%) figure 7. cross talk vs. frequency (v cc = 3.0 v) frequency (hz) 0 ?10 ?70 cross talk (db) ?20 ?30 ?40 ?50 ?60 ?80 figure 8. bandwidth (v cc = 3.0 v) frequency (hz) bw (db) 0 ?5 frequency (hz) off isolation (db) figure 9. total harmonic distortion (v cc = 3.0 v) figure 10. off isolation (v cc = 3.0 v) figure 11. on?resistance vs. input voltage @ 25 c and v cc = 3.0 v and 4.3 v r on ( ) v in (v) v in (v) r on ( ) figure 12. on?resistance vs. input voltage @ v cc = 3.0 v, t a = ?40 c to 85 c 100 0.02 0.04 0.06 0.08 0.1 0.12 0 10k ?90 100k 1m 10m 100m ?10 ?15 ?20 ?25 ?30 1.00e+03 1.00e+05 1.00e+07 1.00e+0 9 0.14 ?20 ?40 ?60 ?80 ?100 ?120 10k 100k 1m 10m 100 m 0.20 0.25 0.30 0.35 0.40 0.45 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v cc = 3.0 v v cc = 4.3 v t a = 85 c t a = 25 c t a = ?40 c
nlas5223c, nlas5223cl www. onsemi.com 9 0.20 0.25 0.30 0.35 0.40 0.45 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 figure 13. on?resistance vs. input voltage @ v cc = 3.0 v, t a = ?40 c to 85 c r on ( ) v in (v) t a = 85 c t a = 25 c t a = ?40 c ordering information device marking package shipping ? nlas5223cmutag ak uqfn10 (pb?free) 3000 / tape & reel NLAS5223CLMUTAG au uqfn10 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
nlas5223c, nlas5223cl www. onsemi.com 10 package dimensions uqfn10, 1.4x1.8, 0.4p case 488at issue a a b a1 0.05 c seating plane note 3 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. dim min max millimeters a 1.40 bsc a1 0.40 bsc 0.45 0.60 b d 0.30 0.50 e e l l1 0.00 0.05 pin 1 reference d a e b 0.10 c 2x 0.10 c 2x 0.05 c c l3 10 1 3 5 6 0.05 c 0.10 ca b 10 x e e/2 l 9 x 0.00 0.15 1.80 bsc 0.15 0.25 mounting footprint 10 x pitch 1 9 x scale 20:1 0.663 0.0261 0.200 0.0079 0.400 0.0157 0.225 0.0089 2.100 0.0827 1.700 0.0669 0.563 0.0221 mm inches 10x l1 detail a bottom view (optional) l3 0.40 0.60 0.127 ref a3 top view side view bottom view on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nlas5223c/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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